| 摘要 |
PROBLEM TO BE SOLVED: To increase an area of a luminous layer to be larger than an element area.SOLUTION: A nitride semiconductor light-emitting diode manufacturing method comprises: a process of forming a mask 23 along a <1-100> direction on a surface of an n-GaN clad layer 21 by a high-melting point material (tungsten) which is solid at a crystal growth temperature; and a process of selectively growing in openings of the mask 23, n-GaN crystals 24 each surrounded by a (11-22) plane and a plane having a plane equivalent to the (11-22) plane. |
