| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has high resistance characteristics and allows reduction in cost.SOLUTION: A semiconductor device includes: a first semiconductor region; a second semiconductor region having a higher impurity concentration than the first semiconductor region and provided on the first semiconductor region; a third semiconductor region having an upper surface, a lower surface provided at the opposite side of the upper surface, outer side surfaces connected to the upper surface and the lower surface, inner side surfaces connected to the upper surface and facing the outer side surfaces, and a bottom surface connected to the inner side surfaces and facing the lower surface, and in which the outer side surfaces and the lower surface are surrounded by a semiconductor stack; a fourth semiconductor region being in contact with the inner side surfaces and the bottom surface of the third semiconductor region; a fifth semiconductor region facing the outer side surfaces of the third semiconductor region via the semiconductor stack; a first electrode being in contact with the third semiconductor region, the fourth semiconductor region, and the second semiconductor region via an insulating film; a second electrode electrically connected to the fourth semiconductor region and the third semiconductor region; and a third electrode electrically connected to the fifth semiconductor region. |
