| 摘要 |
<p>The method comprises: mixing metal elements in a solid form in relative atomic proportions virtually identical to the semiconductor material; dry grinding the mixture, in the absence of sulfur and of selenium, until obtaining a powder of alloy particles; suspending the powder in an organic solvent of polyhydric alcohol type; depositing the suspension on a support; removing the solvent by drying to obtain a layer of particles of alloys; and performing sulfurization and/or selenization on the layer of alloy particles by heat treatment under an atmosphere of sulfur and/or selenium. The method for manufacturing a semiconductor solar absorbing material of copper indium gallium selenide (CIGS) type, copper indium selenide (CIS) type or copper zinc tin sulfide (CZTS) type comprising sulfur and/or selenium and two metal elements consisting of copper, indium, gallium, zinc, and tin, comprises: mixing the metal elements in a solid form such as fragments, chips or grains, in relative atomic proportions virtually identical to the semiconductor material; dry grinding the mixture, in the absence of sulfur and of selenium, until obtaining a powder of alloy particles having a median diameter of 1-5 mu m; suspending the powder of alloy particles in an organic solvent of polyhydric alcohol type whose carbon chain has 2 carbons, where the suspension comprises 1 wt.% of the particles; depositing the suspension on a support; removing the solvent by drying at a temperature higher than a boiling point and in a non-oxidizing atmosphere to obtain a layer of particles of alloys; and performing sulfurization and/or selenization on the layer of alloy particles by heat treatment under an atmosphere of sulfur and/or selenium until the layer of semiconductor material is obtained. The grains before the dry grinding have a median diameter of higher than 20 microns. An independent claim is included for alloy powders.</p> |
