发明名称 |
TRANSITION METAL DICHALCOGENIDES DEVICE FORMED BY RE-CRYSTALLIZATION AND TRANSISTOR DEVICE USING THE SAME |
摘要 |
<p>The present invention relates to a transition metal dichalcogenides device formed by re-crystallization and a transistor device using the same. The present invention is to form single and poly crystals by performing a laser annealing process on amorphous transition metal dichalcogenides formed by a deposition process. For this, a semiconductor channel material is formed by recrystallizing the single and poly crystalline transition metal dichalcogenides by annealing the amorphous transition metal dichalcogenides obtained by the deposition process. [Reference numerals] (AA) After/before laser annealing Vgs_ld</p> |
申请公布号 |
KR20140037703(A) |
申请公布日期 |
2014.03.27 |
申请号 |
KR20120104188 |
申请日期 |
2012.09.19 |
申请人 |
UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY |
发明人 |
KIM, SUN KOOK |
分类号 |
H01L29/04;H01L29/12;H01L29/786;H01L31/09 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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