发明名称 THIN FILM TRANSISTOR AND DISPLAY DEVICE
摘要 According to one embodiment, a display device includes a thin film transistor. The thin film transistor includes a gate insulating film, a semiconductor layer, a gate electrode, first and second channel protection films, first and second conductive layers, and a passivation film. The semiconductor layer is provided on a major surface of the gate insulating film. The semiconductor layer includes first to seventh portions. The gate insulating film is disposed between the semiconductor layer and the gate electrode. The first channel protection film covers the third portion. The second channel protection film covers the fifth and fourth portions, and an upper surface of the first channel protection film. The first conductive layer covers the sixth portion. The second conductive layer covers the seventh portion. The passivation film covers the first and second portions, the first and second conductive layers, and the second channel protection film.
申请公布号 US2014084284(A1) 申请公布日期 2014.03.27
申请号 US201313799565 申请日期 2013.03.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKANO SHINTARO;MIURA KENTARO;SAITO NOBUYOSHI;SAKANO TATSUNORI;UEDA TOMOMASA;YAMAGUCHI HAJIME
分类号 H01L29/786 主分类号 H01L29/786
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