发明名称 |
MASK BLANK, TRANSFER MASK AND METHOD OF MANUFACTURING TRANSFER MASK |
摘要 |
Provided is a mask blank which enables EB defect correction to be suitably applied and which further enables a reduction in the thickness of a light-shielding film. A mask blank 10 is used for producing a transfer mask adapted to be applied with ArF exposure light and has a light-shielding film 2 on a transparent substrate 1. The light-shielding film 2 is composed mainly of a material containing a transition metal, silicon, and at least one or more elements selected from oxygen and nitrogen. An etching rate of the light-shielding film by a fluorine-containing substance in a state of not being irradiated with charged particles is low enough to at least ensure etching selectivity with respect to an etching rate of the light-shielding film by the fluorine-containing substance in a state of being irradiated with the charged particles. |
申请公布号 |
US2014087292(A1) |
申请公布日期 |
2014.03.27 |
申请号 |
US201314094467 |
申请日期 |
2013.12.02 |
申请人 |
HOYA CORPORATION |
发明人 |
HASHIMOTO MASAHIRO;KOMINATO ATSUSHI;IWASHITA HIROYUKI;NOZAWA OSAMU |
分类号 |
G03F1/50;G03F1/00;G03F1/80 |
主分类号 |
G03F1/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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