发明名称 MULTILAYERED PHASE CHANGE MEMORY
摘要 <p>A phase change layer may switch between more and less conductive states in response to electrical stimulation. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and an insulating barrier. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and a thermal barrier.</p>
申请公布号 EP1654735(B1) 申请公布日期 2014.03.26
申请号 EP20040757257 申请日期 2004.07.26
申请人 INTEL CORPORATION 发明人 JOHNSON, BRIAN, G.;HUDGENS, STEPHEN, J.
分类号 G11C11/34;G11C16/02;H01L27/24;H01L45/00 主分类号 G11C11/34
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