发明名称 |
Dry etching method for silicon nitride film |
摘要 |
A dry etching method for a silicon nitride film capable of improving throughput is provided. A dry etching method for dry-etching a silicon nitride film 103 includes dry-etching the silicon nitride film 103 without generating plasma by using a processing gas containing at least a hydrogen fluoride gas (HF gas) and a fluorine gas (F2 gas), with respect to a processing target object 100 including the silicon nitride film 103. |
申请公布号 |
US8679985(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US20100698403 |
申请日期 |
2010.02.02 |
申请人 |
NISHIMURA EIICHI;SHIMIZU YUSUKE;TOKYO ELECTRON LIMITED |
发明人 |
NISHIMURA EIICHI;SHIMIZU YUSUKE |
分类号 |
H01L21/302;B44C1/22;C03C15/00;C03C25/68;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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