| 摘要 |
The present invention relates to a read operation execution method used in a memory device and the memory device with a memory cell array wherein each row of the memory cells is connected to a related read word line, each column forms at least one column group, and a memory cell of each column group connects to a related read line. The memory device includes: a word line driver circuit; a pre-charge circuit; a sense amplifier circuit; a bit line keeper circuit; and a keeper pulse signal generation circuit. Also, the read operation execution method of the memory device increases the operation accuracy when there is a leakage current while not affecting the performance of the read operation. [Reference numerals] (10) Top memory cell; (15,35) Sense amplifier circuit; (20) Bottom memory cell; (30) Memory cell; (AA,CC) Block structure(Can combine multiple blocks and form an memory array); (BB,DD) Sense amplifier structure per column |
