发明名称 |
METHOD AND APPARATUS OF MEASURING ERROR CORRECTION DATA FOR MEMORY |
摘要 |
Multiple measurements are made with one memory sense operation having a first word line sensing voltage on a memory cell. The multiple measurements include a first measurement, of whether the memory cell stores either: (a) data corresponding to a first set of one or more threshold voltage ranges below the first word line sensing voltage of the one memory sense operation, or (b) data corresponding to a second set of one or more threshold voltage ranges above the first word line sensing voltage of the one memory sense operation. The multiple measurements include a second measurement, of error correction data of the memory cell indicating relative position within a particular threshold voltage range of a stored threshold voltage in the memory cell. |
申请公布号 |
US2014082440(A1) |
申请公布日期 |
2014.03.20 |
申请号 |
US201313866834 |
申请日期 |
2013.04.19 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HO KIN-CHU;LI HSIANG-PANG;CHANG HSIE-CHIA |
分类号 |
G11C29/50 |
主分类号 |
G11C29/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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