| 摘要 |
PROBLEM TO BE SOLVED: To provide a patterning method which allows for formation of a pattern on a substrate corresponding to a pattern after phase separation in a different size, a shape or a pitch, with a small number of steps.SOLUTION: In a patterning method, first and second guide patterns for subjecting a DSA material to induction self-organization are formed on a processed film on a substrate. Under first DSA conditions, a first pattern after phase separation having regularity for the first guide pattern is formed, and a first pattern on the substrate is formed by processing the processed film on the lower layer side of the first pattern after phase separation. Thereafter, under second DSA conditions, a second pattern after phase separation having regularity for the second guide pattern is formed, and a second pattern on the substrate is formed by processing the processed film on the lower layer side of the second pattern after phase separation. |
