| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer processing method capable of obtaining extremely high flatness.SOLUTION: A wafer processing method for dividing a wafer which includes a chamfering part in an outer peripheral edge and in which each device is formed in each of the regions partitioned by a plurality of division schedule lines formed in a lattice shape on a surface of the wafer and a plurality of embedded electrodes reaching a depth not less than a finishing thickness of the wafer are buried from each device into individual devices includes the steps of: detecting depths of tips of the plurality of embedded electrodes from a rear surface of the wafer (embedded electrode detection step); thinning the wafer by grinding the rear surface of the wafer to such an extent that the embedded electrodes are not exposed to the rear surface (rear surface grinding step); and bringing a polishing surface of a polishing pad into contact with the rear surface of the wafer held on a holding surface of a chuck table, supplying slurry while properly adjusting an angle between the holding surface of the chuck table and a polishing surface of the polishing pad, and polishing the rear surface of the wafer to such an extent that the embedded electrodes are not exposed to the rear surface (polishing step). |
