| 摘要 |
PROBLEM TO BE SOLVED: To effectively use one electrode of an element and a conductive layer formed in the same process.SOLUTION: A semiconductor device includes: a first conductive layer; a first insulating layer on the first conductive layer; a first oxide semiconductor layer on the first insulating layer; a second oxide semiconductor layer on the first insulating layer; a second conductive layer on the first oxide semiconductor layer; a third conductive layer on the second oxide semiconductor layer; a fourth conductive layer on the first oxide semiconductor layer and the second oxide semiconductor layer; a second insulating layer on the second conductive layer, the third conductive layer, and the fourth conductive layer; a fifth conductive layer on the second insulating layer; and a sixth conductive layer on the second insulating layer. The first conductive layer has a region overlapping the first oxide semiconductor layer, the fifth conductive layer has a region overlapping the first oxide semiconductor layer, and the sixth conductive layer has a region overlapping the second oxide semiconductor layer. The fifth conductive layer is electrically connected to the first conductive layer. |
