| 摘要 |
PROBLEM TO BE SOLVED: To prevent collapse of an uneven pattern in a drying treatment after developing and rinsing in a lithography process on a semiconductor substrate on which the uneven pattern is formed.SOLUTION: A semiconductor device manufacturing method according to the present embodiment comprises: forming a predetermined pattern including an uneven pattern on a substrate; making a surface of the predetermined pattern be water-shedding; forming a resist film on the predetermined pattern; performing exposure processing and development processing on the resist film to make the resist film expose the uneven pattern; water rinsing the substrate; and drying the substrate. |
