| 摘要 |
Provided is a semiconductor device (100A) that includes: a plurality of wirings (7(m), 14(n)); thin film transistors (10) each of which includes a semiconductor layer as an active layer; pixel electrodes (3(m)); a protection layer (8) that covers the thin film transistors (10); auxiliary wirings (9(m)) formed on the protection layer (8); and a common electrode (11) that overlaps at least a part of the pixel electrodes (3(m)) with the protection layer (8) being interposed therebetween and is electrically connected with the auxiliary wirings (9(m)). Each auxiliary wiring (9(m)) is formed above the corresponding one of the wirings (7(m)). The auxiliary wiring (9(m)) has an electric resistance smaller than that of the common electrode (11). As viewed in the normal line direction of the substrate, each auxiliary wiring (9(m)) extends along corresponding one of the wirings (7(m)). As viewed in the normal line direction of the substrate, the common electrode (11) has opening areas (11u(m)) each of which at least partially overlaps corresponding one of the wirings (7(m)). |
