发明名称 High-voltage devices with integrated over-voltage protection and associated methods
摘要 The present technology discloses a high-voltage device comprising a high-voltage transistor and an integrated over-voltage protection circuit. The over-voltage protection circuit monitors a voltage across the high-voltage transistor to detect an over-voltage condition of the high-voltage transistor, and turns the high-voltage transistor ON when the over-voltage condition is detected. Thus, once the high-voltage transistor is in over-voltage condition, the high-voltage transistor is turned ON and can dissipate the power from the over-voltage event through its channel.
申请公布号 US8670219(B2) 申请公布日期 2014.03.11
申请号 US201113162512 申请日期 2011.06.16
申请人 DISNEY DONALD R.;MONOLITHIC POWER SYSTEMS, INC. 发明人 DISNEY DONALD R.
分类号 H02H9/00;H02H3/20;H02H9/04 主分类号 H02H9/00
代理机构 代理人
主权项
地址