SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF
摘要
The present invention relates to a semiconductor memory device and an operating method of the same. The operating method of the semiconductor memory device according to one embodiment of the present invention comprises: executing lower bit programs for the pages of a first page group; executing lower bit programs for the pages of a second page group which is further away from a common source line than the first page group; and executing upper bit programs for the pages of the first page group. [Reference numerals] (AA) Start; (BB) End; (S110) Execute lower bit programs for the pages of a k^th page group; (S120) Execute lower bit programs for the pages of a (k+1)^th page group; (S130) Execute upper bit programs for the pages of a k^th page group; (S140) Execute lower bit programs for the pages of a (k+2)^th page group
申请公布号
KR20140028576(A)
申请公布日期
2014.03.10
申请号
KR20120095114
申请日期
2012.08.29
申请人
SK HYNIX INC.
发明人
PARK, YONG DAE;CHOI, EUN SEOK;AHN, JUNG RYUL;KIM, SE HOON;LIM, IN GEUN;OH, JUNG SEOK