发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide an insulation film which can inhibit diffusion of hydrogen to an oxide semiconductor film in a transistor using the oxide semiconductor; and provide a semiconductor device which uses a transistor using a silicon semiconductor and a transistor using an oxide semiconductor and which has good electrical characteristics.SOLUTION: In a semiconductor device, two nitride insulation films having different functions from each other are provided between a transistor using a silicon semiconductor and a transistor using an oxide semiconductor. In particular, a first hydrogen-containing nitride insulation film is provided on the transistor using the silicon semiconductor and a second nitride insulation film which has a content of hydrogen lower than that of the first nitride insulation film and functions as a barrier film against hydrogen is provided between the first nitride insulation film and the transistor using the oxide semiconductor.
申请公布号 JP2014042005(A) 申请公布日期 2014.03.06
申请号 JP20130146063 申请日期 2013.07.12
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;TANAKA TETSUHIRO;IEDA YOSHINORI;MIYAMOTO TOSHIYUKI;NOMURA MASASHI;HAMOCHI TAKASHI;OKAZAKI KENICHI;ICHIJO MITSUHIRO;ENDO TOSHIYA
分类号 H01L21/336;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/786 主分类号 H01L21/336
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