发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide an insulation film which can inhibit diffusion of hydrogen to an oxide semiconductor film in a transistor using the oxide semiconductor; and provide a semiconductor device which uses a transistor using a silicon semiconductor and a transistor using an oxide semiconductor and which has good electrical characteristics.SOLUTION: In a semiconductor device, two nitride insulation films having different functions from each other are provided between a transistor using a silicon semiconductor and a transistor using an oxide semiconductor. In particular, a first hydrogen-containing nitride insulation film is provided on the transistor using the silicon semiconductor and a second nitride insulation film which has a content of hydrogen lower than that of the first nitride insulation film and functions as a barrier film against hydrogen is provided between the first nitride insulation film and the transistor using the oxide semiconductor. |
申请公布号 |
JP2014042005(A) |
申请公布日期 |
2014.03.06 |
申请号 |
JP20130146063 |
申请日期 |
2013.07.12 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YAMAZAKI SHUNPEI;TANAKA TETSUHIRO;IEDA YOSHINORI;MIYAMOTO TOSHIYUKI;NOMURA MASASHI;HAMOCHI TAKASHI;OKAZAKI KENICHI;ICHIJO MITSUHIRO;ENDO TOSHIYA |
分类号 |
H01L21/336;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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