SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

摘要

A method for manufacturing a semiconductor structure and the semiconductor structure manufactured with the method. The manufacturing method comprises: a) forming gate lines (210) extending in one direction on a substrate (100); b) forming a photoresist layer (300) that covers the semiconductor structure, and patterning the photoresist layer (300) to form an opening (310) that spans the gate lines (210); c) injecting ions to the gate lines (210) through the opening (310) so that the gate lines (210) are insulated (230) in the opening (310). The complete gate lines (210) are retained during the formation of the electrically isolated gates (211, 212), which will not lead to defects in the prior art in the process of forming a dielectric layer, thus ensuring the quality of semiconductor devices.