| 摘要 |
The method comprises inductively heating a silicon plate, melting granular silicon on the plate, and supplying molten silicon through a flow tube in a center of the plate to a phase boundary at which a single crystal of silicon is crystallized by inductively heating a ring of silicon before the inductively heating the plate. The ring is located on the plate, and an outer diameter of the ring is smaller than an outer diameter of the plate, where the ring has a resistivity of greater than 1omega cm, and a specific resistance of the ring is smaller than the specific resistance of the plate. The method comprises inductively heating a silicon plate, melting granular silicon on the plate, and supplying molten silicon through a flow tube in a center of the plate to a phase boundary at which a single crystal of silicon is crystallized by inductively heating a ring of silicon before the inductively heating the plate. The ring is located on the plate, and an outer diameter of the ring is smaller than an outer diameter of the plate, where the ring has a resistivity of greater than 1omega cm, and a specific resistance of the ring is smaller than the specific resistance of the plate. An internal diameter of the ring is equal to an internal diameter of the flow tube. A thickness of the ring is smaller than a thickness of the plate. |
