Embodiments of the invention are directed to an IR photodetector that broadly absorbs electromagnetic radiation including at least a portion of the near infrared (NIR) spectrum. The IR photodetector comprises polydispersed QDs of PbS and/or PbSe. The IR photodetector can be included as a layer in an up-conversion device when coupled to a light emitting diode (LED) according to an embodiment of the invention.
申请公布号
KR20140025360(A)
申请公布日期
2014.03.04
申请号
KR20137025538
申请日期
2011.10.13
申请人
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INCORPORATED;NANOHOLDINGS,LLC
发明人
SO FRANKY;KIM, DO YOUNG;PRADHAN BHABENDRA;LEE, JAE WOONG