SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

The present invention provides a manufacturing method of a semiconductor structure. The method comprises: a) providing a substrate; b) etching the substrate to form an opening (201) having a bottom; c) forming a metal plug (202) filling the opening (201); and d) forming a grapheme layer (300) on the substrate, the grapheme layer (300) being in contact with an upper plane of the metal plug (202). Correspondingly, the present invention further provides a semiconductor structure formed according to the above manufacturing method. According to the method and the structure, grapheme is crystallized in a predetermined area, the particle size of grapheme crystals is increased, and by using a step of optimally depositing the grapheme, the uniformity of a grapheme material is improved, thereby improving working performance and stability of the grapheme material in the semiconductor structure.