| 摘要 |
PROBLEM TO BE SOLVED: To make a hold voltage in a snap-back type EDS (Electro-Static Discharge) protection element be higher than in the past.SOLUTION: A semiconductor device comprises a trench 7 which is formed between a first diffusion layer 11A to which a collector terminal 19A is connected and second and third diffusion layers 6, 11B, to which base and emitter terminals 19B are connected, and which is filled with a conductive material 9 inside via an insulation film 8. A bottom face of the trench 7 reaches a position near an embedded diffusion layer 2 or reaches a high-concentration layer of 10/cmand over inside the embedded diffusion layer 2. |
