| 摘要 |
An embodiment of the present invention relates to a nitride light emitting device capable of reducing thermal resistance by facilitating heat emission by removing a passivation layer partially only on the PAD area of a p-n junction region where heat is generated. Furthermore, by placing a lower electrode at the lower part of a submount substrate, the wire of a p-type electrode pad can be removed. According to the embodiment, the nitride light emitting device includes: a light emitting chip where a first and a second electrodes are placed; a submount substrate which is placed under the light emitting chip; a first electrode pad which is placed on the submount substrate; a passivation layer which is placed on the submount substrate at a certain distance from the first electrode pad; a second electrode pad which is placed on the passiviation layer; a first and a second under bump metal (UBM) layers which are formed on the first and the second electrodes, respectively; a third and a fourth UBM layers which are formed on the first and the second electrode pads, respectively; a first solder bumper which is placed between the first and the third UBM layers; and a second solder bumper which is placed between the second and the fourth UBM layer. |
