| 摘要 |
An image sensor (10) comprises a PMOS circuit layer (12) comprising an array of pixel elements (122). Each pixel element comprises a pinned photodiode, and an amplifier, the amplifier comprising P-FET transistors. The image sensor also comprises a CMOS layer (18) comprising supporting pixel circuitry, including a global shutter sample and hold circuit, the supporting pixel circuitry comprising N-FET transistors (181). Each pixel element in the PMOS layer is connected to supporting pixel circuitry in the CMOS layer. The sample and hold circuit comprises a trench capacitor formed in the CMOS layer. |
