发明名称 DEFECT REDUCTION IN PLASMA PROCESSING
摘要 Provided are methods for reducing defects in which particles are induced on a substrate and a device for the same. In certain specific embodiments of the present invention, the methods accompany a step of reducing plasma diffusion before the plasma is removed. While the particles are discharged from a processing chamber, the reduced plasma diffusion is maintained. In the certain specific embodiment of the present invention, the methods accompany a step of reducing plasma electricity before removing the plasma. While the particles are discharged from the processing chamber, the plasma in low electricity is maintained. [Reference numerals] (201) Provide a substrate in a processing chamber; (203) Generate plasma in the processing chamber with first power; (205) Process the substrate by exposing the substrate to the plasma; (207) Reduce plasma power to the lower power; (209) Maintain low power plasma for a first maintaining period; (211) Extinguish the plasma
申请公布号 KR20140022738(A) 申请公布日期 2014.02.25
申请号 KR20130097358 申请日期 2013.08.16
申请人 NOVELLUS SYSTEMS, INC. 发明人 THOMAS GEORGE;VAN SCHRAVENDIJK BART;TE NIJENHUIS HARALD;HAMILTON SHAWN;MAKHRATCHEV KONSTANTIN
分类号 H05H1/46 主分类号 H05H1/46
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