发明名称 METHOD OF PRODUCING SUBLIMABLE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method of producing a sublimable single crystal by which cracking of the sublimable single crystal such as SiC due to sublimation and thermal stress of a surface of the single crystal can be suppressed.SOLUTION: A gas generation source 12 capable of generating a gas including a component constituting a sublimable single crystal is arranged in a container 10' and a sublimable single crystal 18' is arranged at a position opposed to the gas generation source 12. Then the sublimable single crystal 18' is annealed while given a temperature gradient &Dgr;T so that the gas generation source 12 is at a higher temperature. After the annealing, a crystal may be further grown on a growth surface.
申请公布号 JP2014034504(A) 申请公布日期 2014.02.24
申请号 JP20120177834 申请日期 2012.08.10
申请人 TOYOTA CENTRAL R&D LABS INC;DENSO CORP;SHOWA DENKO KK 发明人 GUNJISHIMA TSUKURU;SUGIYAMA NAOHIRO;URAGAMI YASUSHI;MASUDA TAKASHI;KOBAYASHI MASAKAZU
分类号 C30B29/36;C30B33/02 主分类号 C30B29/36
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