发明名称 |
METHOD OF PRODUCING SUBLIMABLE SINGLE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a sublimable single crystal by which cracking of the sublimable single crystal such as SiC due to sublimation and thermal stress of a surface of the single crystal can be suppressed.SOLUTION: A gas generation source 12 capable of generating a gas including a component constituting a sublimable single crystal is arranged in a container 10' and a sublimable single crystal 18' is arranged at a position opposed to the gas generation source 12. Then the sublimable single crystal 18' is annealed while given a temperature gradient &Dgr;T so that the gas generation source 12 is at a higher temperature. After the annealing, a crystal may be further grown on a growth surface. |
申请公布号 |
JP2014034504(A) |
申请公布日期 |
2014.02.24 |
申请号 |
JP20120177834 |
申请日期 |
2012.08.10 |
申请人 |
TOYOTA CENTRAL R&D LABS INC;DENSO CORP;SHOWA DENKO KK |
发明人 |
GUNJISHIMA TSUKURU;SUGIYAMA NAOHIRO;URAGAMI YASUSHI;MASUDA TAKASHI;KOBAYASHI MASAKAZU |
分类号 |
C30B29/36;C30B33/02 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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