| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor substrate including a high-performance thin film transistor using an oxide semiconductor for an active layer.SOLUTION: A thin film transistor substrate comprises: a thin film transistor 201 including a source electrode 7 and a drain electrode 8 which are arranged on the same plane at a distance from each other, a semiconductor film 12 arranged across the source electrode 7 and the drain electrode 8, an insulation film 14 for covering at least the source electrode 7, the drain electrode 8 and the semiconductor film 12, an upper layer source electrode 21 and an upper layer drain electrode 23 which are arranged on the insulation film 14 and connected to the semiconductor film 12 through contact holes 15, 17, respectively, and a gate electrode 2 which is arranged below or above the semiconductor film 12; source wiring 9 extended from the source electrode 7; upper layer source wiring 22 extended from the upper layer source electrode 21; and a pixel electrode 11 electrically connected to the drain electrode 8. |
