| 摘要 |
An operation method of a semiconductor memory device comprises the steps of: reading a number of program/erasure stored in a program/erasure number storage unit; setting a width of a program pulse according to the read number of program/erasure; and performing a program operation following the program pulse having the width set. In the step of setting the width of the program pulse, the width of program pulse is set to decrease as the number of program/erasure increases. [Reference numerals] (210) Program command input; (220) Program/Elimination number read; (230) Set a program pulse; (240) Perform a program operation; (250) Pass?; (260) Program/update the elimination number; (270) Increase a program voltage; (AA) Start; (BB) No; (CC) Yes; (DD) End |
