| 摘要 |
<p>A method for producing polycrystalline silicon, which comprises: a silicon deposition step wherein silicon is produced by a reaction between a chlorosilane compound and hydrogen; a conversion reaction step wherein the exhaust gas discharged during the silicon deposition step is brought into contact with activated carbon, so that hydrogen chloride in the exhaust gas is removed; a separation step wherein hydrogen in a post-conversion-reaction gas obtained in the conversion reaction step is separated; and a circulation step wherein the hydrogen obtained in the separation step is supplied to the silicon deposition step. This method for producing polycrystalline silicon is characterized by satisfying the condition (1) and/or condition (2) described below. (1) The post-conversion-reaction gas obtained in the conversion reaction step is brought into contact with an adsorbent that contains a Lewis acidic compound before the separation step. (2) The hydrogen obtained in the separation step is brought into contact with an adsorbent that contains a Lewis acidic compound before being supplied to the silicon deposition step.</p> |
