发明名称 PULSE OUTPUT CIRCUIT AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a high-reliability semiconductor device capable of suppressing the shift of the threshold voltage of a transistor due to degradation.SOLUTION: A pulse output circuit comprises: a first transistor having a drain receiving a clock signal; a second transistor having a source receiving a first power-supply potential and having a drain connected to the drain of the first transistor; a third transistor having a drain receiving a second power-supply potential; a fourth transistor having a source receiving the first power-supply potential and having a drain connected to the drain of the third transistor; a fifth transistor having a source receiving the first power-supply potential and having a drain connected to a gate of the third transistor; and a sixth transistor having one of a source and a drain connected to the drain of the first transistor and having the other of them connected to the gate of the third transistor. The first transistor to the third transistor have back gates that are connected to one another, and the first to sixth transistors have the same conductivity type.
申请公布号 JP2014030185(A) 申请公布日期 2014.02.13
申请号 JP20130132206 申请日期 2013.06.25
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANADA YOSHIFUMI;SATO MANABU;MIYAKE HIROYUKI;SASAKI TOSHINARI;OKAZAKI KENICHI;HIZUKA JUNICHI;YAMAZAKI SHUNPEI
分类号 H03K3/356;G02F1/1368;H01L21/336;H01L29/786;H01L51/50;H03K19/0175 主分类号 H03K3/356
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