RESIST PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING PATTERNED SUBSTRATE USING SAME

摘要

A method for forming a resist pattern that includes a layout having a minimum line width of 100 nm or less forms a resist film on a substrate, draws a lithography pattern on the resist film with a variable shape electron beam, and executes puddle development on the resist film such that the film reduction rate of the resist film at undissolved resist portions is 20% or less. Thereby, shifting from designs of lithography patterns due to switching operations of lithography apparatuses when forming resist patterns that include layouts with minimum line widths of 100 nm or less can be prevented.