| 摘要 |
PROBLEM TO BE SOLVED: To reduce both turn-on power loss and radiation noise in an insulated gate semiconductor apparatus. SOLUTION: A second trench 22 is added to a first trench 21 between a first p base region 10 and a second p base region 9, and a third p base region 12 is provided. When the widths of these regions 10, 12, 9 are a, b, c, in this order, the relationship among them is c>a>b. A conductive layer embedded in the first trench is used as a gate electrode. The surface of the first p base region 10 and a conductive layer 11 embedded in the second trench are connected to an emitter electrode 7. COPYRIGHT: (C)2009,JPO&INPIT |
