发明名称 |
Domain wall assisted spin torque transfer magnetresistive random access memory structure |
摘要 |
A semiconductor memory device includes a first ferromagnetic layer magnetically pinned and positioned within a first region of a substrate; a second ferromagnetic layer approximate the first ferromagnetic layer; and a barrier layer interposed between the first ferromagnetic layer and the first portion of the second ferromagnetic layer. The second ferromagnetic layer includes a first portion being magnetically free and positioned within the first region; a second portion magnetically pinned to a first direction and positioned within a second region of the substrate, the second region contacting the first region from a first side; and a third portion magnetically pinned to a second direction and positioned within a third region of the substrate, the third region contacting the first region from a second side. |
申请公布号 |
US8648401(B2) |
申请公布日期 |
2014.02.11 |
申请号 |
US20100884351 |
申请日期 |
2010.09.17 |
申请人 |
LAI CHIH-HUANG;HUANG SHENG-HUANG;HUANG KUO-FENG;LIU MING-TE;LIN CHUN-JUNG;KAO YA-CHEN;CHEN WEN-CHENG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LAI CHIH-HUANG;HUANG SHENG-HUANG;HUANG KUO-FENG;LIU MING-TE;LIN CHUN-JUNG;KAO YA-CHEN;CHEN WEN-CHENG |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|