| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory having high heat resistance.SOLUTION: There is provide a nonvolatile memory comprising a first conductive portion, a second conductive portion and a memory layer. The memory layer is provided between the first conductive portion and the second conductive portion and includes an inorganic oxide layer and a plurality of clusters dispersed into the inorganic oxide layer. The memory layer is reversibly transitioned between a first state having low resistance and a second state having resistance higher than that of the first state by at least any of voltage applied thereto and current supplied thereto via the first conductive portion and the second conductive portion. The plurality of clusters contain any of fullerene and a fullerene derivative. |
