SILICON WAFER RECRYSTALIZTION DEVICE AND METHOD OF RECRYSTALIZING SILICON WAFER

摘要

The purpose of the present invention is to solve problems such as the decrease in size of grains, the increase of crystal failure; coagulated silicon attached to a susceptor; and a crack generated on the silicon caused by a polysilicon film directly attached to the susceptor in an existing technology. Therefore, provided is a structure in which bars with a constant width W are arranged at constant interval S in a moving direction in the susceptor of a plate shape touching the polysilicon film. Provided is also a protruding structure having a width W1 at a gap S1 in a vertical direction to the moving direction. The upper part of the susceptor is changed so that the thickness of a part in which the polysilicon film and the susceptor are in contact with each other is reduced. The present invention provides an operation method for a recrystallization device in order for all parts of the susceptor to be in contact with a liquid silicon in a silicon wafer recrystallization device having the shape of the susceptor so that the problems in the existing method can be solved.