发明名称 FAIL ADDRESS DETECTOR, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME AND METHOD OF DETECTING FAIL ADDRESS
摘要 <p>The present invention relates to a fail address detector. The fail address detector according to an embodiment of the present invention comprises: a plurality of cam latch groups which is configured to store each of the fail addresses; and a comparison unit to determine if the fail address that corresponds to a comparison address is present among the fail addresses received from each of the plurality of cam latch groups. At that time, the plurality of cam latch groups share the comparison unit as a time division. [Reference numerals] (211) First cam latch groups; (212) Second cam latch groups; (21n) nth cam latch groups; (220) Comparison unit; (230) Repair address providing unit</p>
申请公布号 KR20140013695(A) 申请公布日期 2014.02.05
申请号 KR20120081809 申请日期 2012.07.26
申请人 SK HYNIX INC. 发明人 LIM, SANG OH
分类号 G11C29/00 主分类号 G11C29/00
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