| 摘要 |
A plasma processing apparatus and a plasma processing method using the same are provided to reduce a manufacturing cost and to prevent the generation of waste that is harmful to an environment by rapidly performing an etching process using equipment smaller than wet etching equipment. A first gas is sprayed to a first electrode(30). A substrate support(20) is separated from the first electrode to support the substrate. A second electrode(40) is arranged to be separated from the substrate support. Power is applied to the second electrode and second gas is sprayed to the second electrode, thereby forming plasma between the substrate supported by the substrate support and the second electrode. The first gas is non-reactive gas. The non-reactive gas includes hydrogen, nitrogen, or non-volatile gas. Plural spraying holes(33,42) are formed on the first electrode to spray the first gas to the substrate. The spraying hole is communicated with a supplying hole(31) that supplies the first gas to the first electrode. |
