| 摘要 |
According to one embodiment, a nonvolatile semiconductor memory device comprises a memory cell array including memory cell transistors configured to store information in accordance with n (n is an integer larger than 2) threshold voltage levels, and a control circuit configured to control the memory cell array. In a write operation, the control circuit shifts a threshold voltage level of a write target memory cell transistor to a base threshold level of the n threshold levels, except for a threshold level having a highest voltage and a threshold level having a lowest voltage. Then the control circuit shifts the threshold voltage level of the write target memory cell transistor from the base threshold level to one of the n threshold levels. |
