CONTROL OF POLISHING OF MULTIPLE SUBSTRATES ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING

摘要

A polishing method includes positioning two substrates in contact with the same polishing pad. Prior to commencement of polishing and while the two substrates are in contact with the polishing pad, two starting values are generated from an in-situ monitoring system. Either a starting polishing time or a pressure applied to one of the substrates can be adjusted so that the two substrates have closer endpoint conditions. During polishing the two substrates are monitored with the in-situ monitoring system to generate a two sequences of values, and a polishing endpoint can be detected or an adjustment for a polishing parameter can be based on the two sequences of values.