| 摘要 |
A TFT 1 is formed on a glass substrate 11, and a flattening resin film 17 covering the TFT 1 is formed. Furthermore, a moisture-proof protective film 18 covering the entire surface of the flattening resin film 17 is formed. For the protective film 18, a SiO 2 film, a SiN film, a SiON film, or a stacked film thereof is used. The edge surfaces of the flattening resin film 17 are disposed on the inner side of or under a seal 4, and are formed in a tapered shape. By this, the entry of moisture into the flattening resin film 17 is prevented, preventing display degradation. This effect becomes noticeable in a display device including an oxide semiconductor TFT. |
