PHOTORESIST COMPOSITION AND METHOD FOR PRODUCING PHOTORESIST PATTERN

摘要

The present invention relates to a photoresist composition which comprises: a resin including a structure unit represented by chemical formula I; a resin which includes a structure unit having an acid-labile group but not includes the structure unit represented by the chemical formula I; and an acid generator represented by chemical formula II. In the chemical formula I and II, R^1 indicates a hydrogen atom or a methyl group, R^2 indicates a C1-C10 hydrocarbon group, X^2 indicates a C1-C6 alkanediyl group in which the hydrogen atom can be substituted by a hydroxyl group or a -O-R5 group, and a methylene group can be substituted by an oxygen atom or a carbonyl group. R^4 and R^5 are C1-C24 hydrocarbon groups in which the hydrogen atom can be substituted by a fluorine atom or the hydroxyl group, and the methylene group can be substituted by the oxygen atom or the carbonyl group. Z^+ indicates an organic cation.