| 摘要 |
Disclosed are an active image sensor and its fabrication method. According to the present invention, a method for fabricating an active image sensor includes a step of depositing a first metal layer on a substrate, a step of etching a first metal layer to form a gate region, a step of depositing a dielectric layer on the first metal layer and the substrate which are etched, a step of forming a first photoresist on the dielectric layer, a step of depositing a second metal layer and removing the photoresist and a second metal layer on a first photoresist region, a step of forming a second photoresist on the second metal layer, a step of depositing a photoreaction layer, and a step of removing the photoreaction layer on the second photoresist. |
