METHOD OF MAKING VACUUM SENSOR WITH PRESET-SENSITIVITY NANOSTRUCTURE AND VACUUM SENSOR BUILT THERE AROUND

摘要

FIELD: instrumentation.SUBSTANCE: in compliance with proposed method hetero structure is made from different materials. Thin-film semiconductor resistor is formed in said structure. Then, said structure is secured in sensor case while contact sites are connected to case terminals by contact conductors. Said thin-film semiconductor resistor is formed as a grid-type nanostructure (SiO)(SnO)Weight fraction of component x is defined (set) in the range of 50%?x?90% by applying the orthosilicic acid sol containing tin hydroxide on silicon substrate with the help of centrifuge followed annealing. Said sol is prepared in two steps: at first step, tetraethoxysilane and ethanol, then, at second step, distilled water, hydrochloric acid (HCl) and tin chloride dehydrate (SnCl·2HO) are added to aforesaid solution.EFFECT: higher sensitivity.2 cl, 10 dwg