| 摘要 |
PROBLEM TO BE SOLVED: To provide a barrier insulation film formation method, and a barrier insulation film formation apparatus to enhance insulation characteristics between a silicon penetration electrode and a silicon substrate while suppressing signal delay at the silicon penetration electrode.SOLUTION: A barrier insulation film is formed on an inner side surface at a through hole for a silicon penetration electrode (TSV) formed in a silicon substrate included in a substrate S. On this occasion, by supplying activated Nitrogen and Zr(BH)to the substrate S and nitrogenizing the Zr(BH), a coating step to cover the inner side surface of the through hole by a ZrBN film is implemented. Thereafter, by supplying activated Oxygen to the ZrBN film formed and oxidizing the whole of the ZrBN film, an oxidization step to form a ZrBON film on the inner side surface of the through hole is implemented. And, by repeating these coating step and oxidization step plural times, the barrier insulation film is formed. |
