STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTICAL CAVITY SURFACE EMITTING LASER,申请号WO2013US51498-传众专利搜索

发明名称	STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTICAL CAVITY SURFACE EMITTING LASER
摘要	A Ill-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching.
申请公布号	WO2014015337(A2)	申请公布日期	2014.01.23
申请号	WO2013US51498	申请日期	2013.07.22
申请人	THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;HOLDER, CASEY O.;FEEZELL, DANIEL F.;DENBAARS, STEVEN P.;SPECK, JAMES S.;NAKAMURA, SHUJI	发明人	HOLDER, CASEY O.;FEEZELL, DANIEL F.;DENBAARS, STEVEN P.;SPECK, JAMES S.;NAKAMURA, SHUJI
分类号	H01S5/10;H01S5/183	主分类号	H01S5/10
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