| 摘要 |
A semiconductor device and a method for forming the same includes a pillar formed over a semiconductor substrate, a buried bit line formed below the semiconductor substrate, a vertical gate formed over a sidewall of the pillar, an insulation film pattern formed to expose one side of the vertical gate disposed between the pillars, and a word line coupled to the exposed vertical gate. The vertical gate is formed to cover a portion of a sidewall of the pillar with a metal material, a word line overlaps with some parts of the vertical gate, and some parts of the pillar are shifted to be coupled to the vertical gate. |
