SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING SCHOTTKY BARRIER DIODE

摘要

A method for manufacturing a Schottky barrier diode (11) includes the following steps. First, a GaN substrate (2) is prepared. A GaN layer (3) is formed on the GaN substrate (2). A Schottky electrode (4) including a first layer made ofNi or Ni alloy and in contact with the GaN layer (3) is formed. The step of forming the Schottky electrode (4) includes a step of forming a metal layer to serve as the Schottky electrode (4) and a step of heat treating the metal layer. A region of the GaN layer (3) in contact with the Schottky electrode (4) has a dislocation density of 1×10 8 cm -2 or less.