| 摘要 |
PROBLEM TO BE SOLVED: To produce a thin film of group I-III-VI compound semiconductor having excellent characteristics.SOLUTION: A substrate having one principal surface, on which a group I-B element and a group III-B element are deposited, is placed in a heating furnace. A mixed gas containing a non-oxidizing gas and a compound gas of a chalcogen element is heated to a first temperature, lower than the decomposition temperature of the compound gas, and then introduced into the heating furnace where the substrate is placed. In the atmosphere of the mixed gas in the heating furnace, the chalcogen element is supplied to a film by decomposition of the compound gas, while heating the substrate to a second temperature equal to or higher than the decomposition temperature, thus producing a thin film of group I-III-VI compound semiconductor from the film. |
