发明名称 |
DIFFERENTIAL TEMPERATURE SENSOR AND ITS CAPACITORS IN CMOS/BICMOS TECHNOLOGY |
摘要 |
The sensor is made on a semiconductor substrate covered with an electrically insulating layer. The electrically insulating layer separates a thermocouple from the substrate. It includes a first portion presenting a first value of capacitance per unit area and a second portion presenting a second value of capacitance per unit area, which is lower than the first value. The sensor includes first and second output terminals connected to the thermocouple. The first output terminal includes a first capacitor having a first electrode formed by a first leg made of an electrically conducting material. The second electrode of the capacitor is formed by a part of the substrate facing said first leg and separated from the first electrode by the first portion of the electrically insulating layer. The first leg connects the thermocouple while overlapping the second portion of the electrically insulating layer. |
申请公布号 |
US2014015089(A1) |
申请公布日期 |
2014.01.16 |
申请号 |
US201214006877 |
申请日期 |
2012.03.15 |
申请人 |
SAVELLI GUILLAUME;COTTIN DENIS;ST-ERICSSON SA;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
SAVELLI GUILLAUME;COTTIN DENIS |
分类号 |
G01K7/02;H01L35/34 |
主分类号 |
G01K7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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